fqa60n65smdigbt transistor   high power insulated gate bipolar transistor for industrial applications-1

IGBT Transistor

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FQA60N65SMDIGBT Transistor - High-Power Insulated Gate Bipolar Transistor for Industrial Applications

FGA60N65SMD is a 600V, 60A IGBT module produced by ON Semiconductor. It has a rated voltage of 600V and a rated current of 60A, making it suitable for high voltage and high power applications. It adopts a low on-resistance design, which can reduce conduction losses and improve efficiency. And it also has fast switching speed, which can reduce switching losses and improve efficiency. Finally, it has high temperature tolerance and can adapt to high temperature environments.


Power electronics applications: Suitable for high-voltage and high-power applications in the field of power electronics, such as frequency converters, motor drives, etc.


Industrial control applications: Suitable for high-voltage and high-power applications in the field of industrial control, such as PLC, industrial robots, etc.


Automotive electronics applications: Suitable for high-voltage and high-power applications in the field of automotive electronics, such as electric vehicles, hybrid vehicles, etc.


Other applications: Suitable for other applications requiring high voltage and high power, such as solar inverters, wind turbines, etc.

Manufacturer Product Number

FQA60N65SMD

Manufacturer

onsemi
IGBT Type Field Stop
Power - Max 600W
Test Condition 400V, 60A, 3Ohm, 15V
Mounting Type Through Hole

Package / Case 

TO-3P

OperatingTemperature -55°C ~ 175°C (TJ)


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