fgh60n60sfdigbt power transistor   high efficiency industrial grade semiconductor-1

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FGH60N60SFDIGBT Power Transistor - High-Efficiency Industrial Grade Semiconductor

FGH60N60SFD is an automotive-grade IGBT transistor produced by onsemi. The chip has good stability and impact resistance. It can continuously ensure the maximum drain-source current of FGH60N60SFD of 60A and the drain-source breakdown voltage of 600V. It can be used for solar inverters. Provides optimal performance for generator, UPS, welder and PFC applications.

Model FGH60N60SFD
Brand ON/ON Semiconductor
Package TO-247
Maximum drain-source current 60A
Drain-source breakdown voltage 600V
RDS(ON)Max

Number of pins

3
Features  IGBT diode

Leakage current

ua
Working temperature -55℃~175℃


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